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| savantic semiconductor product specification silicon pnp power transistors 2n5737 2N5738 description with to-3 package low collector saturation voltage applications for general?purpose switching and power amplifier applications. pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n5737 -60 v cbo collector-base voltage 2N5738 open emitter -100 v 2n5737 -60 v ceo collector-emitter voltage 2N5738 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -20 a i b base current -4 a p c collector power dissipation t c =100 50 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2n5737 2N5738 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5737 -60 v ceo(sus) collector-emitter sustaining voltage 2N5738 i c =-0.2a ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-10a ;i b =-2.5a -3.0 v v besat base-emitter saturation voltage i c =-10a ;i b =-2.5a -2.5 v v be base-emitter on voltage i c =-4a ; v ce =-4v -1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i cex collector cut-off current v ce = rated v ceo ; v be(off) =-1.5v t c =150 -0.5 -5.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-5a ; v ce =-5v 20 80 h fe-2 dc current gain i c =-10a ; v ce =-5v 4 f t transition frequency i c =-0.5a ; v ce =-10v 10 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2n5737 2N5738 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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